2SB1624 Bipolar Transistor

Characteristics of 2SB1624 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1624

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1624 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1624-O will be in the range from 5000 to 12000, for the 2SB1624-P it will be in the range from 6500 to 20000, for the 2SB1624-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1624 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1624 might only be marked "B1624".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1624 is the 2SD2493.

Replacement and Equivalent for 2SB1624 transistor

You can replace the 2SB1624 with the 2SA1106, 2SB1555, 2SB1556, 2SB1557, 2SB1558, 2SB1559, 2SB1560, BDV66C or BDV66D.
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