2SB1116A-K Bipolar Transistor

Characteristics of 2SB1116A-K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB1116A-K

The 2SB1116A-K is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1116A-K transistor can have a current gain of 200 to 400. The gain of the 2SB1116A will be in the range from 135 to 400, for the 2SB1116A-L it will be in the range from 135 to 270, for the 2SB1116A-U it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1116A-K might only be marked "B1116A-K".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1116A-K is the 2SD1616A-K.

SMD Version of 2SB1116A-K transistor

The 2SB1115A (SOT-89) and 2SB1115A-YP (SOT-89) is the SMD version of the 2SB1116A-K transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

2SB1116A-K Transistor in TO-92 Package

The KSB1116A-G is the TO-92 version of the 2SB1116A-K.

Replacement and Equivalent for 2SB1116A-K transistor

You can replace the 2SB1116A-K with the KSB1116A or KSB1116A-G.
If you find an error please send an email to mail@el-component.com