KSB1116A-G Bipolar Transistor
Characteristics of KSB1116A-G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2SB1116A-K transistor
Pinout of KSB1116A-G
Here is an image showing the pin diagram of this transistor.
Classification of hFE
Complementary NPN transistor
SMD Version of KSB1116A-G transistor
KSB1116A-G Transistor in TO-92 Package
Replacement and Equivalent for KSB1116A-G transistor
If you find an error please send an email to mail@el-component.com