2SB1016A Bipolar Transistor

Characteristics of 2SB1016A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 240
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1016A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1016A transistor can have a current gain of 70 to 240. The gain of the 2SB1016A-O will be in the range from 70 to 140, for the 2SB1016A-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1016A might only be marked "B1016A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1016A is the 2SD1407A.

SMD Version of 2SB1016A transistor

The BDP954 (SOT-223) is the SMD version of the 2SB1016A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1016A transistor

You can replace the 2SB1016A with the 2SB1016, 2SB1367, 2SB595, 2SB995, BD244C, BD540C, BD544C, BD546C, BD802, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, KTA1038, KTA1049, KTB1367, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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