2SA1016G Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -0.05 A
• Collector Dissipation: 0.4 W
• DC Current Gain (h_fe): 280 to 560
• Transition Frequency, min: 110 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92

The 2SA1016G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The 2SA1016G transistor can have a current gain of 280 to 560. The gain of the 2SA1016 will be in the range from 160 to 960, for the 2SA1016F it will be in the range from 160 to 320, for the 2SA1016H it will be in the range from 480 to 960.Sometimes the "2S" prefix is not marked on the package - the 2SA1016G might only be marked "A1016G".The complementary NPN transistor to the 2SA1016G is the 2SC2326G.The FJV992 (SOT-23) is the SMD version of the 2SA1016G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SA1016G with the 2SA1016K, 2SA1016KG, 2SA1017, 2SA1017G, 2SA1049, 2SA1082, 2SA1085, 2SA1269, 2SA1285, 2SA1285A, 2SA1376, 2SA872A, 2SA970, 2SA992, 2SB715, 2SB716 or KSA992.