2SA1017G Bipolar Transistor

Characteristics of 2SA1017G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 280 to 560
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1017G

The 2SA1017G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1017G transistor can have a current gain of 280 to 560. The gain of the 2SA1017 will be in the range from 100 to 560, for the 2SA1017E it will be in the range from 100 to 200, for the 2SA1017F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1017G might only be marked "A1017G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1017G is the 2SC2363G.

SMD Version of 2SA1017G transistor

The FJV992 (SOT-23) is the SMD version of the 2SA1017G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1017G transistor

You can replace the 2SA1017G with the 2SA1016, 2SA1016G, 2SA1016K, 2SA1016KG, 2SA1049, 2SA1082, 2SA1085, 2SA1269, 2SA1285, 2SA1285A, 2SA1376, 2SA872A, 2SA970, 2SA992, 2SB715, 2SB716 or KSA992.
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