2SA1082 Bipolar Transistor

Characteristics of 2SA1082 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 250 to 800
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1082

The 2SA1082 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1082 transistor can have a current gain of 250 to 800. The gain of the 2SA1082-D will be in the range from 250 to 500, for the 2SA1082-E it will be in the range from 400 to 800.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1082 might only be marked "A1082".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1082 is the 2SC2544.

SMD Version of 2SA1082 transistor

The FJV992 (SOT-23) is the SMD version of the 2SA1082 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1082 transistor

You can replace the 2SA1082 with the 2SA1085, 2SA1285 or 2SA1285A.
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