2SB716 Bipolar Transistor

Characteristics of 2SB716 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 250 to 800
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB716

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB716 transistor can have a current gain of 250 to 800. The gain of the 2SB716-D will be in the range from 250 to 500, for the 2SB716-E it will be in the range from 400 to 800.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB716 might only be marked "B716".

Complementary NPN transistor

The complementary NPN transistor to the 2SB716 is the 2SD756.

SMD Version of 2SB716 transistor

The FJV992 (SOT-23) is the SMD version of the 2SB716 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB716 transistor

You can replace the 2SB716 with the 2SA1016K, 2SA1082, 2SA1085, 2SA1285, 2SA1285A, 2SA872A, 2SA992 or KSA992.
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