2SA1016H Bipolar Transistor

Characteristics of 2SA1016H Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 480 to 960
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1016H

The 2SA1016H is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1016H transistor can have a current gain of 480 to 960. The gain of the 2SA1016 will be in the range from 160 to 960, for the 2SA1016F it will be in the range from 160 to 320, for the 2SA1016G it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1016H might only be marked "A1016H".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1016H is the 2SC2326H.

Replacement and Equivalent for 2SA1016H transistor

You can replace the 2SA1016H with the 2SA1016K or 2SA1016KH.
If you find an error please send an email to mail@el-component.com