2SB747-Q Bipolar Transistor

Characteristics of 2SB747-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 7 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB747-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB747-Q transistor can have a current gain of 60 to 120. The gain of the 2SB747 will be in the range from 40 to 200, for the 2SB747-P it will be in the range from 100 to 200, for the 2SB747-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB747-Q might only be marked "B747-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB747-Q is the 2SD812-Q.

SMD Version of 2SB747-Q transistor

The BDP952 (SOT-223) is the SMD version of the 2SB747-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB747-Q transistor

You can replace the 2SB747-Q with the 2N6491, 2N6491G, 2SA1010, 2SA1010L, 2SA1077, 2SA1725, 2SA1726, 2SA771, 2SB1016, 2SB1367, 2SB595, 2SB633, 2SB633-D, 2SB708, 2SB708-O, 2SB870, 2SB870-R, 2SB945, 2SB945-R, 2SB946, 2SB946-R, 2SB995, BD244B, BD244C, BD538, BD540B, BD540C, BD544B, BD544C, BD546B, BD546C, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BD952, BD954, BD956, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, D45H11, D45H11FP, KSA1010, KSA1010O, KSB708, KSB708-O, KTB1367, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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