STD01N-Y Bipolar Transistor

Characteristics of STD01N-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO4

Pinout of STD01N-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD01N-Y transistor can have a current gain of 8000 to 20000. The gain of the STD01N will be in the range from 5000 to 20000, for the STD01N-O it will be in the range from 5000 to 12000.

Equivalent circuit

STD01N-Y equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the STD01N-Y is the STD01P-Y.

Replacement and Equivalent for STD01N-Y transistor

You can replace the STD01N-Y with the STD02N, STD02N-Y, STD03N or STD03N-Y.
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