STD01N Bipolar Transistor

Characteristics of STD01N Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 5000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO4

Pinout of STD01N

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD01N transistor can have a current gain of 5000 to 20000. The gain of the STD01N-O will be in the range from 5000 to 12000, for the STD01N-Y it will be in the range from 8000 to 20000.

Equivalent circuit

STD01N equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the STD01N is the STD01P.

Replacement and Equivalent for STD01N transistor

You can replace the STD01N with the STD02N or STD03N.
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