STD01N-O Bipolar Transistor
Characteristics of STD01N-O Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 5000 to 12000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P-5WO4
Pinout of STD01N-O
Classification of hFE
Equivalent circuit
Complementary PNP transistor
Replacement and Equivalent for STD01N-O transistor
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