STD01P-Y Bipolar Transistor
Characteristics of STD01P-Y Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 8000 to 20000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P-5WO2
Pinout of STD01P-Y
Classification of hFE
Equivalent circuit
Complementary NPN transistor
Replacement and Equivalent for STD01P-Y transistor
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