STD01P-Y Bipolar Transistor

Characteristics of STD01P-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO2

Pinout of STD01P-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD01P-Y transistor can have a current gain of 8000 to 20000. The gain of the STD01P will be in the range from 5000 to 20000, for the STD01P-O it will be in the range from 5000 to 12000.

Equivalent circuit

STD01P-Y equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the STD01P-Y is the STD01N-Y.

Replacement and Equivalent for STD01P-Y transistor

You can replace the STD01P-Y with the STD02P, STD02P-Y, STD03P or STD03P-Y.
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