STD02N Bipolar Transistor

Characteristics of STD02N Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 5000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO4

Pinout of STD02N

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD02N transistor can have a current gain of 5000 to 20000. The gain of the STD02N-O will be in the range from 5000 to 12000, for the STD02N-Y it will be in the range from 8000 to 20000.

Equivalent circuit

STD02N equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the STD02N is the STD02P.

Replacement and Equivalent for STD02N transistor

You can replace the STD02N with the STD03N.
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