STD03N-Y Bipolar Transistor

Characteristics of STD03N-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 160 W
  • DC Current Gain (hfe): 8000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO4

Pinout of STD03N-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD03N-Y transistor can have a current gain of 8000 to 20000. The gain of the STD03N will be in the range from 5000 to 20000, for the STD03N-O it will be in the range from 5000 to 12000.

Equivalent circuit

STD03N-Y equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the STD03N-Y is the STD03P-Y.
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