MJ11020 Bipolar Transistor

Characteristics of MJ11020 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 400 to 15000
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11020

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ11020 is the MJ11019.

Replacement and Equivalent for MJ11020 transistor

You can replace the MJ11020 with the 2N6676, 2N6677, 2N6678, 2SC1586, BUX48, MJ11022 or MJ11022G.
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