MJ11019 Bipolar Transistor

Characteristics of MJ11019 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 400 to 15000
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11019

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ11019 is the MJ11020.

Replacement and Equivalent for MJ11019 transistor

You can replace the MJ11019 with the 2SA909, MJ11021 or MJ11021G.
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