MJ11022G Bipolar Transistor
Characteristics of MJ11022G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 250 V
- Emitter-Base Voltage, max: 50 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 175 W
- DC Current Gain (hfe): 400 to 15000
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The MJ11022G is the lead-free version of the MJ11022 transistor
Pinout of MJ11022G
Complementary PNP transistor
Replacement and Equivalent for MJ11022G transistor
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