MJ11022G Bipolar Transistor

Characteristics of MJ11022G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 50 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 400 to 15000
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11022G is the lead-free version of the MJ11022 transistor

Pinout of MJ11022G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ11022G is the MJ11021G.

Replacement and Equivalent for MJ11022G transistor

You can replace the MJ11022G with the 2N6676, 2N6677, 2N6678, BUX48, BUX48A, MJ11022 or MJ12022.
If you find an error please send an email to mail@el-component.com