KTD882 Bipolar Transistor

Characteristics of KTD882 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882 transistor

Pinout of KTD882

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD882 transistor can have a current gain of 100 to 400. The gain of the KTD882-GR will be in the range from 200 to 400, for the KTD882-O it will be in the range from 100 to 200, for the KTD882-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KTD882 is the KTB772.

Replacement and Equivalent for KTD882 transistor

You can replace the KTD882 with the 2SD1348, 2SD1683, 2SD1722, 2SD1723, 2SD882, BD131, BD185, BD187, BD189, BDX35, BDX36, KSD882, KSH882, MJE222, MJE225 or MJE520.
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