KTD882 Bipolar Transistor
Characteristics of KTD882 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 30 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 100 to 400
- Transition Frequency, min: 90 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD882 transistor
Pinout of KTD882
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KTD882 transistor
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