KTD882-O Bipolar Transistor

Characteristics of KTD882-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882O transistor

Pinout of KTD882-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD882-O transistor can have a current gain of 100 to 200. The gain of the KTD882 will be in the range from 100 to 400, for the KTD882-GR it will be in the range from 200 to 400, for the KTD882-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KTD882-O is the KTB772-O.

Replacement and Equivalent for KTD882-O transistor

You can replace the KTD882-O with the 2SC2877, 2SC3422, 2SD1348, 2SD1348-R, 2SD1683, 2SD1683-R, 2SD1722, 2SD1722-R, 2SD1723, 2SD1723-R, 2SD793, 2SD793-Q, 2SD794, 2SD794-O, 2SD794A, 2SD794A-O, 2SD882, 2SD882O, 2SD882Q, BD131, BD175, BD175-16, BD177, BD185, BD187, BD189, BD785, BD787, BD787G, BDX35, BDX36, KSD794, KSD794-O, KSD794A, KSD794A-O, KSD882, KSD882-O, KSE180, KSE181, KSH882, KSH882-O, KTC2804, MJE180, MJE180G, MJE181, MJE181G, MJE220, MJE222, MJE223, MJE225 or MJE520.
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