KSH882-G Bipolar Transistor

Characteristics of KSH882-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882GR transistor

Pinout of KSH882-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSH882-G transistor can have a current gain of 200 to 400. The gain of the KSH882 will be in the range from 60 to 400, for the KSH882-O it will be in the range from 100 to 200, for the KSH882-R it will be in the range from 60 to 120, for the KSH882-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KSH882-G is the KSH772-G.

Replacement and Equivalent for KSH882-G transistor

You can replace the KSH882-G with the 2SC2270, 2SC3420, 2SC3420-GL, 2SC6101, 2SC6102, 2SD1348, 2SD1348-T, 2SD1683, 2SD1683-T, 2SD1722, 2SD1722-R, 2SD1723, 2SD1723-R, 2SD882, 2SD882E, 2SD882GR, BD131, BD185, BD187, BD189, BDX35, BDX36, KSD882, KSD882-G, KTD882, KTD882-GR, MJE222, MJE225 or MJE520.
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