KSD1691-O Bipolar Transistor

Characteristics of KSD1691-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1691-M transistor

Pinout of KSD1691-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1691-O transistor can have a current gain of 100 to 200. The gain of the KSD1691 will be in the range from 100 to 400, for the KSD1691-G it will be in the range from 200 to 400, for the KSD1691-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KSD1691-O is the KSB1151-O.

SMD Version of KSD1691-O transistor

The BDP949 (SOT-223) is the SMD version of the KSD1691-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSD1691-O transistor

You can replace the KSD1691-O with the 2SD1691 or 2SD1691-M.
If you find an error please send an email to mail@el-component.com