2SD1691-M Bipolar Transistor

Characteristics of 2SD1691-M Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1691-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1691-M transistor can have a current gain of 100 to 200. The gain of the 2SD1691 will be in the range from 100 to 400, for the 2SD1691-K it will be in the range from 200 to 400, for the 2SD1691-L it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1691-M might only be marked "D1691-M".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1691-M is the 2SB1151-M.

SMD Version of 2SD1691-M transistor

The BDP949 (SOT-223) is the SMD version of the 2SD1691-M transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1691-M transistor

You can replace the 2SD1691-M with the KSD1691 or KSD1691-O.
If you find an error please send an email to mail@el-component.com