KSD1691 Bipolar Transistor
Characteristics of KSD1691 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 100 to 400
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD1691 transistor
Pinout of KSD1691
Classification of hFE
Complementary PNP transistor
SMD Version of KSD1691 transistor
Replacement and Equivalent for KSD1691 transistor
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