KSD1691 Bipolar Transistor

Characteristics of KSD1691 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1691 transistor

Pinout of KSD1691

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1691 transistor can have a current gain of 100 to 400. The gain of the KSD1691-G will be in the range from 200 to 400, for the KSD1691-O it will be in the range from 100 to 200, for the KSD1691-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KSD1691 is the KSB1151.

SMD Version of KSD1691 transistor

The BDP949 (SOT-223) is the SMD version of the KSD1691 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSD1691 transistor

You can replace the KSD1691 with the 2SD1691.
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