BDP949 Bipolar Transistor
Characteristics of BDP949 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 3 W
- DC Current Gain (hfe): 85 to 475
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
Pinout of BDP949
Marking
Complementary PNP transistor
Replacement and Equivalent for BDP949 transistor
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