BDP949 Bipolar Transistor

Characteristics of BDP949 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 3 W
  • DC Current Gain (hfe): 85 to 475
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223

Pinout of BDP949

Here is an image showing the pin diagram of this transistor.

Marking

The BDP949 transistor is marked as "BDP949".

Complementary PNP transistor

The complementary PNP transistor to the BDP949 is the BDP950.

Replacement and Equivalent for BDP949 transistor

You can replace the BDP949 with the BDP951, BDP953, BDP955 or NZT44H8.
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