KTD1691 Bipolar Transistor
Characteristics of KTD1691 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 160 to 400
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD1691 transistor
Pinout of KTD1691
Classification of hFE
Complementary PNP transistor
SMD Version of KTD1691 transistor
Replacement and Equivalent for KTD1691 transistor
If you find an error please send an email to mail@el-component.com