KTD1691 Bipolar Transistor

Characteristics of KTD1691 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1691 transistor

Pinout of KTD1691

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD1691 transistor can have a current gain of 160 to 400. The gain of the KTD1691-O will be in the range from 160 to 320, for the KTD1691-Y it will be in the range from 200 to 400.

Complementary PNP transistor

The complementary PNP transistor to the KTD1691 is the KTB1151.

SMD Version of KTD1691 transistor

The BDP949 (SOT-223) is the SMD version of the KTD1691 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTD1691 transistor

You can replace the KTD1691 with the 2SD1691 or KSD1691.
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