2SA1209 Bipolar Transistor

Characteristics of 2SA1209 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.14 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1209

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1209 transistor can have a current gain of 100 to 400. The gain of the 2SA1209-R will be in the range from 100 to 200, for the 2SA1209-S it will be in the range from 140 to 280, for the 2SA1209-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1209 might only be marked "A1209".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1209 is the 2SC2911.

Replacement and Equivalent for 2SA1209 transistor

You can replace the 2SA1209 with the 2SA1210, 2SA1248, 2SA1249, 2SA1477 or 2SA1507.
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