2SA1142P Bipolar Transistor

Characteristics of 2SA1142P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 180 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1142P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1142P transistor can have a current gain of 160 to 320. The gain of the 2SA1142 will be in the range from 100 to 320, for the 2SA1142Q it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1142P might only be marked "A1142P".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1142P is the 2SC2682P.

Replacement and Equivalent for 2SA1142P transistor

You can replace the 2SA1142P with the 2SA1210, 2SA1352, 2SA1352-F, 2SA1353, 2SA1353-F, 2SA1380, 2SA1380-F, 2SA1381, 2SA1381-F, 2SA1406, 2SA1406-F, 2SA1407, 2SA1407-F, 2SA1478, 2SA1478-F, 2SA1479, 2SA1479-F, 2SA1480, 2SA1480-F, 2SA1540, 2SA1540-F, 2SA1541, 2SA1541-F, 2SA795A, 2SB1110, 2SB1110-D, KSA1142, KSA1142Y, KSA1381 or KSA1381-F.
If you find an error please send an email to mail@el-component.com