BUL128FP Bipolar Transistor
Characteristics of BUL128FP Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 31 W
- DC Current Gain (hfe): 14 to 40
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
Pinout of BUL128FP
Replacement and Equivalent for BUL128FP transistor
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