MJE13009G Bipolar Transistor

Characteristics of MJE13009G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE13009G is the lead-free version of the MJE13009 transistor

Pinout of MJE13009G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13009G transistor

You can replace the MJE13009G with the FJP13009, KSE13009 or MJE13009.
If you find an error please send an email to mail@el-component.com