MJE13009G Bipolar Transistor
Characteristics of MJE13009G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 8 to 40
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE13009G is the lead-free version of the MJE13009 transistor
Pinout of MJE13009G
Replacement and Equivalent for MJE13009G transistor
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