MJE13009 Bipolar Transistor

Characteristics of MJE13009 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE13009

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13009 transistor

You can replace the MJE13009 with the FJP13009, KSE13009 or MJE13009G.

Lead-free Version

The MJE13009G transistor is the lead-free version of the MJE13009.
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