FJP13009 Bipolar Transistor

Characteristics of FJP13009 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular MJE13009 transistor

Pinout of FJP13009

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJP13009 transistor can have a current gain of 8 to 40. The gain of the FJP13009H1 will be in the range from 8 to 17, for the FJP13009H2 it will be in the range from 15 to 28.

Marking

The FJP13009 transistor is marked as "J13009".

Replacement and Equivalent for FJP13009 transistor

You can replace the FJP13009 with the KSE13009, MJE13009 or MJE13009G.
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