MJE13007G Bipolar Transistor

Characteristics of MJE13007G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 8 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE13007G is the lead-free version of the MJE13007 transistor

Pinout of MJE13007G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13007G transistor

You can replace the MJE13007G with the FJP13007, KSE13007, KSE13007F, MJE13007, MJE13007A or STD13007F.
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