MJE13007G Bipolar Transistor
Characteristics of MJE13007G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 80 W
- DC Current Gain (hfe): 8 to 60
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE13007G is the lead-free version of the MJE13007 transistor
Pinout of MJE13007G
Replacement and Equivalent for MJE13007G transistor
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