KSE13009 Bipolar Transistor

Characteristics of KSE13009 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular MJE13009 transistor

Pinout of KSE13009

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13009 transistor can have a current gain of 8 to 40. The gain of the KSE13009H1 will be in the range from 8 to 17, for the KSE13009H2 it will be in the range from 15 to 28.

Marking

The KSE13009 transistor is marked as "E13009".

Replacement and Equivalent for KSE13009 transistor

You can replace the KSE13009 with the FJP13009, MJE13009 or MJE13009G.
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