BDV65BG Bipolar Transistor

Characteristics of BDV65BG Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • The BDV65BG is the lead-free version of the BDV65B transistor

Pinout of BDV65BG

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDV65BG equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BDV65BG is the BDV64BG.

Replacement and Equivalent for BDV65BG transistor

You can replace the BDV65BG with the 2SD1197, 2SD2390, 2SD2390-O, 2SD2390-P, 2SD2390-Y, BDV65B, BDV67B, BDV67C, BDV67D, TIP142 or TIP142G.
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