BDV65BG Bipolar Transistor
Characteristics of BDV65BG Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
- The BDV65BG is the lead-free version of the BDV65B transistor
Pinout of BDV65BG
Equivalent circuit
Complementary PNP transistor
Replacement and Equivalent for BDV65BG transistor
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