BDV67D Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 150 V
• Collector-Base Voltage, max: 160 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 16 A
• Collector Dissipation: 200 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BDV67D is the BDV66D.