2SD2390 Bipolar Transistor

Characteristics of 2SD2390 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 55 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD2390

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD2390 transistor can have a current gain of 5000 to 30000. The gain of the 2SD2390-O will be in the range from 5000 to 12000, for the 2SD2390-P it will be in the range from 6500 to 20000, for the 2SD2390-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SD2390 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD2390 might only be marked "D2390".

Complementary PNP transistor

The complementary PNP transistor to the 2SD2390 is the 2SB1560.

Replacement and Equivalent for 2SD2390 transistor

You can replace the 2SD2390 with the BDV67D.
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