BDV65B Bipolar Transistor

Characteristics of BDV65B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of BDV65B

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDV65B equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BDV65B is the BDV64B.

Replacement and Equivalent for BDV65B transistor

You can replace the BDV65B with the 2SD1197, 2SD2390, 2SD2390-O, 2SD2390-P, 2SD2390-Y, BDV65BG, BDV67B, BDV67C, BDV67D, TIP142 or TIP142G.

Lead-free Version

The BDV65BG transistor is the lead-free version of the BDV65B.
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