2SD2390-O Bipolar Transistor

Characteristics of 2SD2390-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 5000 to 12000
  • Transition Frequency, min: 55 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD2390-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD2390-O transistor can have a current gain of 5000 to 12000. The gain of the 2SD2390 will be in the range from 5000 to 30000, for the 2SD2390-P it will be in the range from 6500 to 20000, for the 2SD2390-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SD2390-O equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD2390-O might only be marked "D2390-O".

Complementary PNP transistor

The complementary PNP transistor to the 2SD2390-O is the 2SB1560-O.

Replacement and Equivalent for 2SD2390-O transistor

You can replace the 2SD2390-O with the BDV67D, MJH11018, MJH11018G, MJH11020, MJH11020G, MJH11022 or MJH11022G.
If you find an error please send an email to mail@el-component.com