2SD2390-O Bipolar Transistor
Characteristics of 2SD2390-O Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 5000 to 12000
- Transition Frequency, min: 55 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SD2390-O
Classification of hFE
Equivalent circuit
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD2390-O transistor
If you find an error please send an email to mail@el-component.com