BDV64BG Bipolar Transistor

Characteristics of BDV64BG Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • The BDV64BG is the lead-free version of the BDV64B transistor

Pinout of BDV64BG

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDV64BG equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BDV64BG is the BDV65BG.

Replacement and Equivalent for BDV64BG transistor

You can replace the BDV64BG with the 2SB1560, 2SB1560-O, 2SB1560-P, 2SB1560-Y, 2SB887, BDV64B, BDV66B, BDV66C, BDV66D, TIP147 or TIP147G.
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