BDV64B Bipolar Transistor

Characteristics of BDV64B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of BDV64B

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDV64B equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BDV64B is the BDV65B.

Replacement and Equivalent for BDV64B transistor

You can replace the BDV64B with the 2SB1560, 2SB1560-O, 2SB1560-P, 2SB1560-Y, 2SB887, BDV64BG, BDV66B, BDV66C, BDV66D, TIP147 or TIP147G.

Lead-free Version

The BDV64BG transistor is the lead-free version of the BDV64B.
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