2N5191G Bipolar Transistor

Characteristics of 2N5191G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The 2N5191G is the lead-free version of the 2N5191 transistor

Pinout of 2N5191G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5191G is the 2N5194G.

Replacement and Equivalent for 2N5191G transistor

You can replace the 2N5191G with the 2N5191, MJE225, MJE242 or MJE244.
If you find an error please send an email to mail@el-component.com