MJE243 Bipolar Transistor

Characteristics of MJE243 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 180
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • These Devices are Pb-Free and are RoHS Compliant

Pinout of MJE243

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE243 is the MJE253.

SMD Version of MJE243 transistor

The BDP953 (SOT-223) is the SMD version of the MJE243 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE243 transistor

You can replace the MJE243 with the BD791, MJE243G or MJE244.
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