MJE243G Bipolar Transistor
Characteristics of MJE243G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 40 to 180
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of MJE243G
Complementary PNP transistor
SMD Version of MJE243G transistor
Replacement and Equivalent for MJE243G transistor
If you find an error please send an email to mail@el-component.com