MJE243G Bipolar Transistor

Characteristics of MJE243G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 180
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE243G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE243G is the MJE253G.

SMD Version of MJE243G transistor

The BDP953 (SOT-223) is the SMD version of the MJE243G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE243G transistor

You can replace the MJE243G with the BD791, MJE243 or MJE244.
If you find an error please send an email to mail@el-component.com