BD139G Bipolar Transistor
Characteristics of BD139G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 12.5 W
- DC Current Gain (hfe): 40 to 250
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- The BD139G is the lead-free version of the BD139 transistor
Pinout of BD139G
Complementary PNP transistor
SMD Version of BD139G transistor
Replacement and Equivalent for BD139G transistor
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