BD139G Bipolar Transistor

Characteristics of BD139G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • The BD139G is the lead-free version of the BD139 transistor

Pinout of BD139G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD139G is the BD140G.

SMD Version of BD139G transistor

The BCP56 (SOT-223) is the SMD version of the BD139G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD139G transistor

You can replace the BD139G with the BD139, BD169, BD179, BD230, BD237, BD237G, BD379, BD789, BD791, MJE242, MJE244 or MJE722.
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