BCW65 Bipolar Transistor

Characteristics of BCW65 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 630
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW65

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW65 transistor can have a current gain of 100 to 630. The gain of the BCW65A will be in the range from 100 to 250, for the BCW65B it will be in the range from 160 to 400, for the BCW65C it will be in the range from 250 to 630.

Complementary PNP transistor

The complementary PNP transistor to the BCW65 is the BCW67.

Replacement and Equivalent for BCW65 transistor

You can replace the BCW65 with the BCW66 or FMMT619.
If you find an error please send an email to mail@el-component.com