BC850BW Bipolar Transistor

Characteristics of BC850BW Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC850BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC850BW transistor can have a current gain of 200 to 450. The gain of the BC850AW will be in the range from 110 to 220, for the BC850CW it will be in the range from 420 to 800, for the BC850W it will be in the range from 110 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC850BW is the BC860BW.

Replacement and Equivalent for BC850BW transistor

You can replace the BC850BW with the 2SC4116, BC817W, BC846BW, BC846W, BC847BW, BC847W or FJX945.
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