BC856BW Bipolar Transistor

Characteristics of BC856BW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC856BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856BW transistor can have a current gain of 200 to 450. The gain of the BC856AW will be in the range from 110 to 220, for the BC856CW it will be in the range from 420 to 800, for the BC856W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856BW is the BC846BW.

Replacement and Equivalent for BC856BW transistor

You can replace the BC856BW with the 2SA1587 or FJX992.
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