BC817W Bipolar Transistor
Characteristics of BC817W Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 50 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 100 to 600
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-323
- Electrically Similar to the Popular BC337 transistor
Pinout of BC817W
Classification of hFE
Complementary PNP transistor
BC817W Transistor in TO-92 Package
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